SPI35N10
SPP35N10,SPB35N10
SIPMOS Power-Transistor
Product Summary
Feature
100
VDS
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
P-TO262-3-1
V
R DS(on)
44
m
ID
35
A
P-TO263-3-2
P-TO220-3-1
dv/dt rated
Type
SPP35N10
Package
P-TO220-3-1
Ordering Code
Q67042-S4123
Marking
SPB35N10
P-TO263-3-2
Q67042-S4103
35N10
SPI35N10
P-TO262-3-1
Q67042-S4124
35N10
35N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TC=25°C
35
TC=100°C
26.4
ID puls
140
EAS
245
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
150
W
-55... +175
°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID =35 A , VDD =25V, RGS =25
Reverse diode dv/dt
mJ
kV/µs
IS =35A, VDS =80V, di/dt=200A/µs, Tjmax =175°C
TC=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
55/175/56
Page 1
2004-08-06
SPI35N10
SPP35N10,SPB35N10
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
-
1
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
-
-
62
-
-
40
@ min. footprint
@ 6 cm 2 cooling area
F)
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
100
-
-
VGS(th)
2.1
3
4
Static Characteristics
Drain-source breakdown voltage
V
VGS =0V, ID =1mA
Gate threshold voltage, VGS = VDS
ID =83µA
Zero gate voltage drain current
µA
IDSS
VDS =100V, VGS=0V, Tj =25°C
-
0.01
1
VDS =100V, VGS=0V, Tj =125°C
-
1
100
IGSS
-
1
100
nA
RDS(on)
-
36
44
m
Gate-source leakage current
VGS =20V, VDS =0V
Drain-source on-state resistance
VGS =10V, ID =26.4A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2004-08-06
SPI35N10
SPP35N10,SPB35N10
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
12
23
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS 2*ID*RDS(on)max
, ID=26.4A
Input capacitance
Ciss
VGS =0V, VDS=25V,
-
1180
1570
Output capacitance
Coss
f=1MHz
-
245
326
Reverse transfer capacitance
Crss
-
137
206
Turn-on delay time
td(on)
VDD =50V, VGS =10V,
-
12.2
18.3
Rise time
tr
ID =35A, RG =7
-
63
95
Turn-off delay time
td(off)
-
39
59
Fall time
tf
-
23
34
-
6.5
8.6
-
27
41
-
49
65
V(plateau) VDD =80V, ID=35A
-
6.1
-
V
IS
-
-
35
A
-
-
140
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =80V, ID =35A
VDD =80V, ID =35A,
nC
VGS =0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TC=25°C
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS =0V, IF =35A
-
0.95
1.25
V
Reverse recovery time
trr
VR =50V, IF =lS ,
-
80
100
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
230
290
nC
Page 3
2004-08-06
SPI35N10
SPP35N10,SPB35N10
1 Power dissipation
2 Drain current
Ptot = f (TC )
ID = f (TC )
parameter: VGS 10 V
160
SPP35N10
38
SPP35N10
A
W
120
28
100
24
ID
Ptot
32
20
80
16
60
12
40
8
20
0
0
4
20
40
60
80
0
0
100 120 140 160 °C 190
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJC = f (tp )
parameter : D = 0 , TC = 25 °C
parameter : D = tp /T
10
10 1
3 SPP35N10
SPP35N10
K/W
A
10 0
Z thJC
tp = 2.5µs
ID
10 2
10 -1
D
10 µs
DS
/I
D = 0.50
=V
100 µs
10
0.20
DS
(on
)
0.10
0.05
R
10
1
-2
1 ms
10 -3
single pulse
0.02
0.01
10 ms
10 0 -1
10
DC
10
0
10
1
10
2
V
10
3
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
VDS
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2004-08-06
SPI35N10
SPP35N10,SPB35N10
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS ); Tj=25°C
RDS(on) = f (ID )
parameter: tp = 80 µs
parameter: VGS
90
e
500
d
A
a
VGS[V]=
a= 5
b= 6
c= 8
d= 10
e= 12
c
m
ID
60
50
RDS(on)
VGS[V]=
a= 5
b= 6
c= 8
d= 10
e= 12
70
b
300
40
200
30
b
c
20
100
d
10
a
e
0
0
1
2
3
4
5
6
V
0
0
8
10
20
30
40
50
60
70
80
A
100
ID
VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); VDS 2 x ID x RDS(on)max
parameter: tp = 80 µs
gfs = f(ID ); Tj=25°C
parameter: gfs
60
24
S
A
20
18
ID
g fs
40
16
14
30
12
10
20
8
6
10
4
2
0
2
3
4
5
7
V
0
0
5
10
15
20
25
35
A
ID
VGS
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2004-08-06
SPI35N10
SPP35N10,SPB35N10
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj)
parameter : ID = 26.4 A, VGS = 10 V
parameter: VGS = VDS
190
SPP35N10
4
m
V
140
VGS(th)
RDS(on)
160
120
3
ID =1mA
100
80
2.5
60
98%
typ
40
2
ID =83µA
20
0
-60
-20
20
60
100
140
°C
1.5
-65
200
-35
-5
25
55
85
115
Tj
°C
175
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS =0V, f=1 MHz
parameter: Tj , tp = 80 µs
10
4
10 3
pF
SPP35N10
A
Ciss
10 2
C
IF
10 3
Coss
Crss
10 2
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 1
0
5
10
15
20
25
35
V
10 0
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
VDS
Page 6
2004-08-06
SPI35N10
SPP35N10,SPB35N10
11 Typ. avalanche energy
12 Typ. gate charge
EAS = f (Tj )
VGS = f (QGate )
par.: ID = 35 A , VDD = 25 V, RGS = 25
parameter: ID = 35 A pulsed
270
16
mJ
V
210
12
VGS
EAS
SPP35N10
180
0,2 VDS max
0,8 VDS max
10
150
8
120
6
90
4
60
2
30
0
25
45
65
85
105
125
145
°C
185
0
0
10
20
30
40
50
60 nC
75
QGate
Tj
13 Drain-source breakdown voltage
V(BR)DSS = f (Tj )
SPP35N10
120
V (BR)DSS
V
114
112
110
108
106
104
102
100
98
96
94
92
90
-60
-20
20
60
100
140
°C
200
Tj
Page 7
2004-08-06
SPI35N10
SPP35N10,SPB35N10
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
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regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
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written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
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or system Life support devices or systems are intended to be implanted in the human body, or to support
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Page 8
2004-08-06
